Germany - Miscellaneous special-purpose machinery
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Details
Provided by- Opportunity closing date
- 13 December 2019
- Opportunity publication date
- 18 November 2019
- Category
- 42990000
- Value of contract
- to be confirmed
- Your guide to exporting
Description
Semiconductor nitride materials, such as alloys of AlGaN epitaxial layers, must be deposited uniformly on wafers having a diameter of 100 mm or higher by the use of a Metalorganic chemical vapor deposition (MOCVD) system. This system must be capable to operate at wafer surface temperatures of 1 350 ˚C or above, in order to deposit AlN epitaxial layer on sapphire wafers with superior crystal quality, as well as to deposit high performing and uniform high electron mobility transistor (HEMT) structures on SiC wafers.
- Opportunity closing date
- 13 December 2019
- Value of contract
- to be confirmed
About the buyer
- Address
- Fraunhofer Gesellschaft zur Förderung der Angewandten Forschung e.V. über Vergabeportal Deutsche eVergabe Hansastr. 27c München 80686 Germany
- Contact
- fraunhofer@deutsche-evergabe.de
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