Germany - Miscellaneous special-purpose machinery

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Details

Provided by Open Opps
Opportunity closing date
13 December 2019
Opportunity publication date
18 November 2019
Category
42990000
Value of contract
to be confirmed
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Description

Semiconductor nitride materials, such as alloys of AlGaN epitaxial layers, must be deposited uniformly on wafers having a diameter of 100 mm or higher by the use of a Metalorganic chemical vapor deposition (MOCVD) system. This system must be capable to operate at wafer surface temperatures of 1 350 ˚C or above, in order to deposit AlN epitaxial layer on sapphire wafers with superior crystal quality, as well as to deposit high performing and uniform high electron mobility transistor (HEMT) structures on SiC wafers.

Opportunity closing date
13 December 2019
Value of contract
to be confirmed

About the buyer

Address
Fraunhofer Gesellschaft zur Förderung der Angewandten Forschung e.V. über Vergabeportal Deutsche eVergabe Hansastr. 27c München 80686 Germany
Contact
fraunhofer@deutsche-evergabe.de

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